Formation of boron-doped titanium metal films with high work function

ABSTRACT

A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.

FIELD OF INVENTION

The present disclosure generally relates to formation of a metallic film. In particular, the present disclosure relates to a method for forming a metallic film with a high electronic work function (“eWF”).

BACKGROUND OF THE DISCLOSURE

In applications such as the formation of pMOS metal gates, it is generally desirable to deposit a metal with a high work function and a low resistivity. A high work function allows for a lower threshold voltage offset and a lower off current. From this, a lower leakage current can be achieved and a threshold voltage swing can be improved. A low resistivity positively affects a cycle time and allows for higher speed processing.

Formation of Titanium Nitride (“TiN”) films has been achieved using different methods. However, the TiN films created have exhibited different work functions based on the method used. For example, TiN films created through Atomic Layer Deposition (“ALD”) have demonstrated work functions ranging between 4.70 and 4.75 eV. TiN films created through plasma treatment with hydrogen gas in an EmerALD® XP Process Module from ASM International have demonstrated a work function of approximately 4.96 eV. TiN films created through Plasma Enhanced Atomic Layer Deposition (“PEALD”) treatment with Tantalum Carbon Nitride (“TaCN”) in an EmerALD® XP Process Module have demonstrated a work function of approximately 5.00 eV.

While the TiN films created through the plasma or PEALD treatment have exhibited higher electronic work functions, plasma treatments have been discouraged for pMOS metal gate applications due to concerns over plasma damage. In addition, the plasma treatments result in films with a greater Effective Oxide Thickness (“EOT”), which is known in the art as a thickness of a silicon oxide film required in order to produce the same effect as a high-k material being used. A greater EOT is undesirable because it leads to a reduced capacitance.

Accordingly, a method that creates a metallic film with a high electronic work function, low resistivity, and lower effective oxide thickness is desired.

SUMMARY OF THE DISCLOSURE

According to at least one embodiment of the invention, a method for forming a metallic film is disclosed. The method comprises a depositing step of a thin metallic layer onto a semiconductor device and a pulsing step of a gas onto the thin metallic layer. The depositing step comprises: (1) pulsing a metal halogen gas onto the semiconductor device; (2) purging the semiconductor gas with an inert gas; (3) pulsing a nitridizing gas onto the semiconductor device; and (4) purging the semiconductor gas with the inert gas. The pulsing step comprises: (1) pulsing a Boron-based gas onto the semiconductor device; and (2) purging the semiconductor device with an inert gas.

For purposes of summarizing the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described herein above. Of course, it is to be understood that not necessarily all such objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein without necessarily achieving other objects or advantages as may be taught or suggested herein.

All of these embodiments are intended to be within the scope of the invention herein disclosed. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments having reference to the attached figures, the invention not being limited to any particular embodiment(s) disclosed.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the drawings of certain embodiments, which are intended to illustrate and not to limit the invention.

FIG. 1 illustrates a device in accordance with at least one embodiment of the invention.

FIG. 2 illustrates steps for a method in accordance with at least one embodiment of the invention.

FIG. 3 illustrates steps for a method in accordance with at least one embodiment of the invention.

FIG. 4 illustrates steps for a method in accordance with at least one embodiment of the invention.

It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Although certain embodiments and examples are disclosed below, it will be understood by those in the art that the invention extends beyond the specifically disclosed embodiments and/or uses of the invention and obvious modifications and equivalents thereof. Thus, it is intended that the scope of the invention disclosed should not be limited by the particular disclosed embodiments described below.

Embodiments of the current invention relate to the doping of Boron into titanium metal films, such as Titanium Nitride (“TiN”). The result is a Boron-doped metal film, such as Titanium Boron Nitride. The doping of Boron into the formation of TiN films has shown promise as a result of Boron's ability to remove excess chlorine in the film resulting from the passing of Titanium Chloride (“TiCl₄”) gas. For example, Diborane in gaseous form reacts with the Chlorine in the film with the following reaction. B₂H₆ (g)+6Cl (in-film)→2BCl₃ (g)+3H₂ (g)

FIG. 1 illustrates a device made in accordance with at least one embodiment of the invention. The device comprises: a substrate 10; a semiconductor channel 20; and a high-k semiconductor layer 30. Upon this device, an undoped TiN underlayer 40 is deposited. This undoped TiN underlayer 40 may be omitted. Above the undoped TiN underlayer 40 is a Boron-doped TiN layer 50. On top of the Boron-doped TiN layer 50 is an undoped TiN overlayer 60. As a result of this creation, the work function of the TiN device has ranged between 4.95 and 5.10 eV, while limiting an increase in an effective oxide thickness of the device.

FIG. 2 illustrates a method according to at least one embodiment of the invention. The method may take place in a single chamber in-situ. Prior to this method, a device enters the single chamber. The device is similar to the device illustrated in FIG. 1, prior to the addition of the Boron-doped layer and the overlayer.

The method comprises a depositing step 100, in which a thin metal film is deposited. The method also comprises a pulsing step 200, in which the deposited thin metal film is pulsed with a gas. The depositing step 100 and the pulsing step 200 are explained in further detail below.

The method also comprises a first repeating step 300, in which the depositing step 100 is repeated before heading to the pulsing step 200. The first repeating step 300 may occur as many times as necessary to form an appropriate thickness of the thin metal film. An appropriate thickness achieved through the first repeating step 300 may be less than or equal to 10 Angstroms.

The method also comprises a second repeating step 400, in which the depositing step 100 is repeated after the pulsing step 200 has been completed. The second repeating step 400 may occur as many times as necessary to form an appropriate thickness of the metal film. An appropriate thickness achieved through the second repeating step 400 may range between 20 and 100 Angstroms.

FIG. 3 illustrates the depositing step 100 in accordance with at least one embodiment of the invention. The depositing step 100 first starts with a metal halogen pulse 110. The metal halogen pulse 110 has a duration ranging between 100 and 2000 milliseconds. Titanium Chloride (TiCl₄) is typically used as the gas in the metal halogen pulse 110. Other metal chlorides may be used in this step, such as Zirconium Chloride (ZrCl₄), Hafnium Chloride (HfCl₄), Vanadium Chloride (VCl₅), Niobium Chloride (NbCl₅), Tantalum Chloride (TaCl₅), Molybdenum Fluoride (MoF₆), or Tungsten Fluoride (WF₆). As a result of this step, a film layer of metal halogen is disposed on the device.

The Titanium Chloride pulse 110 is followed by an Inert Gas purge 120. The Inert Gas purge 120 has a duration typically exceeding 1000 milliseconds. Typically, Argon (Ar) gas is used as the inert gas, though it may also be possible to use diatomic Nitrogen (N₂) gas in this step. The Inert Gas purge 120 removes excess precursor from the surface of the semiconductor device and would also remove the excess precursor from the chamber. As a result of this step, excess reactant metal halogen gas from the metal halogen pulse 110 is removed from the device. Ideally, after the Inert Gas purge 120, a monolayer of the metal halogen gas would be adsorbed to the device.

A Nitridizing gas pulse 130 follows the Inert Gas purge 120. The Nitridizing gas pulse 130 typically ranges in duration from 300 to 5000 milliseconds. Typically, Ammonia (NH₃) gas is used for the Nitridizing gas pulse. It would be also possible to substitute Hydrazine (N₂H₂), Methyl Hydrazine, or Dimethyl Hydrazine for Ammonia. As a result of this step, a metal film is formed; for example, Titanium Nitride is formed from the reaction of Titanium Chloride with Ammonia.

The last step of the depositing step 100 is an Inert Gas purge 140. The Inert Gas purge 140 is much like the Inert Gas purge 120 and has a duration typically exceeding 1000 milliseconds. Also, Inert Gas purge 140 will typically use Argon gas, though diatomic Nitrogen gas may also be used. The Inert Gas purge 140 removes excess precursor from the surface of the semiconductor device and would also remove the excess precursor from the chamber. As a result of this step, any excess reactant gas or byproducts would be swept away from the device.

FIG. 4 illustrates the pulsing step 200 in accordance with at least one embodiment of the invention. The depositing step 200 first may start with an optional metal halogen pulse 210. The optional metal halogen pulse 210 has a duration ranging between 100 and 2000 milliseconds. The benefit of this optional metal halogen pulse 210 is control over the amount of Boron doping. Similar to the metal halogen pulse 110, gases used for the optional metal halogen pulse 210 can comprise: Zirconium Chloride (ZrCl₄), Hafnium Chloride (HfCl₄), Vanadium Chloride (VCl₅), Niobium Chloride (NbCl₅), Tantalum Chloride (TaCl₅), Molybdenum Fluoride (MoF₆), or Tungsten Fluoride (WF₆).

The optional metal halogen pulse 210 is followed by a Boron-based gas pulse 220. The Boron gas pulse 220 typically has a duration ranging between 100 and 2000 milliseconds. Typically, Diborane (B₂H₆) is used for the Boron gas pulse 220. As a result of this step, the Diborane reacts with the adsorbed metal halogen on the film to form gaseous products and a metallic film.

The last step of the pulsing step 200 is an Inert Gas purge 230. The Argon purge 230 is similar to the Inert Gas purges 120 and 140, such that either Argon gas or diatomic Nitrogen gas may be used. The Inert Gas purge 230 has a duration typically exceeding 1000 milliseconds. The Inert Gas purge 230 removes excess precursor or byproducts from the surface of the semiconductor device and would also remove the excess precursor or byproducts from the chamber. As a result of this step, the gaseous products formed in the previous steps are removed.

The particular implementations shown and described are illustrative of the invention and its best mode and are not intended to otherwise limit the scope of the aspects and implementations in any way. Indeed, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and/or physical couplings between the various elements. Many alternative or additional functional relationship or physical connections may be present in the practical system, and/or may be absent in some embodiments.

It is to be understood that the configurations and/or approaches described herein are exemplary in nature, and that these specific embodiments or examples are not to be considered in a limiting sense, because numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Thus, the various acts illustrated may be performed in the sequence illustrated, in other sequences, or omitted in some cases.

The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems, and configurations, and other features, functions, acts, and/or properties disclosed herein, as well as any and all equivalents thereof. 

What is claimed is:
 1. A method for forming a Boron-doped metallic film comprising: depositing a thin metallic layer onto a semiconductor device in a chamber, the depositing step consisting of: pulsing a metal halogen gas onto the semiconductor device; purging the semiconductor device and the chamber with an inert gas; pulsing a nitridizing gas onto the semiconductor device; purging the semiconductor device and the chamber with the inert gas; repeating the step of depositing and then; doping the thin metallic layer with Boron by pulsing a Boron-based gas onto the thin metallic layer to provide Boron in the thin metallic layer to form the Boron-doped metallic film; and purging the semiconductor device and the chamber with an inert gas; wherein an electronic work function is modulated by a number of times the depositing step is repeated.
 2. The method of claim 1, wherein the depositing step and the pulsing step are repeated until a desired thickness of the Boron-doped metallic film is achieved.
 3. The method of claim 2, wherein the desired thickness of the Boron-doped metallic film ranges between 20 and 100 Angstroms.
 4. The method of claim 1, wherein the desired thickness of the thin metallic layer is less than or equal to 10 Angstroms.
 5. The method of claim 1, wherein the thin metallic layer comprises Titanium Nitride.
 6. The method of claim 1, wherein doping the thin metallic layer with Boron further comprises: pulsing a metal halogen gas onto the thin metallic layer prior to and followed by pulsing the Boron-based gas onto the thin metallic layer.
 7. The method of claim 1, wherein the Boron-doped metallic film formed exhibits an electronic work function ranging between 4.95 and 5.10 eV.
 8. The method of claim 1, further comprising: depositing a thin underlayer of undoped Titanium Nitride prior to the depositing step.
 9. The method of claim 1, further comprising: depositing a thin overlayer of undoped Titanium Nitride after the doping the thin metallic layer with Boron.
 10. The method of claim 1, wherein the chamber is a single chamber in-situ.
 11. The method of claim 1, wherein the steps of purging with an inert gas comprises purging with Argon gas for a duration exceeding 1000 milliseconds.
 12. The method of claim 1, wherein the step of pulsing with the metal halogen gas has a duration ranging between 100 and 2000 milliseconds.
 13. The method of claim 1, wherein the step of pulsing with the Nitrogen-based gas has a duration ranging between 300 and 5000 milliseconds.
 14. The method of claim 1, wherein the step of pulsing with the Boron-based gas has a duration ranging between 100 and 2000 milliseconds.
 15. The method of claim 1, wherein the metal halogen gas comprises at least one of: Titanium Chloride, Zirconium Chloride, Hafnium Chloride, Vanadium Chloride, Niobium Chloride, Tantalum Chloride, Molybdenum Fluoride, or Tungsten Fluoride.
 16. The method of claim 1, wherein the Boron-based gas comprises Diborane.
 17. The method of claim 1, wherein the nitridizing gas comprises at least one of: Ammonia, Hydrazine, Methyl Hydrazine, or Dimethyl Hydrazine.
 18. The method of claim 1, wherein the inert gas comprises at least one of: Argon or diatomic Nitrogen.
 19. The method of claim 1, wherein the depositing step consists of the steps of pulsing a metal halogen gas, purging the semiconductor device and the chamber with an inert gas, pulsing a nitridizing gas, and purging the semiconductor device and the chamber with the inert gas.
 20. The method of claim 1, wherein the metal halogen gas is selected from one or more of the group consisting of Titanium Chloride, Zirconium Chloride, Hafnium Chloride, Vanadium Chloride, Niobium Chloride, Tantalum Chloride, Molybdenum Fluoride, or Tungsten Fluoride and wherein the nitridizing gas is selected from the group consisting of one or more of: Ammonia, Hydrazine, Methyl Hydrazine, or Dimethyl Hydrazine. 